Process technology for semiconductor device, 5 credits

Processteknik för halvledarenheter


Language of instruction: English
Course period: 1 (September - November 2024)
Course structure: Lectures on campus


MSc education or equivalent in physics, engineering physics, electrical engineering, electronics, embedded systems, physical chemistry or materials science.


After completing the course, the students should be able to:

  • understand the fundamentals behind critical process modules (reaching basic level),
  • be familiar with the process flow comprising a series of process modules for the fabrication of a complete MOSFET, MEMS/NEMS, spintronic device or a simple integrated circuit (IC) (reaching basic level),
  • describe and implement each of the process modules at a deeper level backed by physics and theoretical tools such as models and analytical equations (reaching advanced level),
  • design a process flow for realization of specific device structure, functionality and performance assisted by simulation (reaching master level).


Several research disciplines (“program” in Swedish) including Solid-State Electronics (Department of Electrical Engineering), Electricity (Department of Electrical Engineering), Networked Embedded Systems (Department of Electrical Engineering), Microsystem Technology (Department of Materials Science and Engineering), Solid-State Physics (Department of Materials Science and Engineering) and Condensed Matter Physics of Energy Material (Department of Physics and Astronomy) at the Faculty conduct cutting-edge research that utilizes the established semiconductor process technology for nano/micro-devices in the cleanroom facilities. The proposed course with the outlined contents will best serve the purpose for the doctoral students in the participating disciplines to attain their respective doctorate degree.
Specifically, the course aims to provide the students with the in-depth knowledge of process technology used for device design and fabrication at micro- and nano-scale. The methods and process modules developed along with the rapid progress of microelectronics represented by CMOS technology over the past several decades are generic and have been widely adopted in micro-system technology (MEMS) as well. Standard silicon technology encompassing these methods and process modules is also the base for the emerging spintronics, quantum electronics and neuromorphic electronics wherein new materials will be brought in thereby demanding innovations in process technology.
The primary focus of this course is placed on standard silicon technology for metal-oxide-semiconductor field-effect transistors (MOSFETs). The course will also offer complementary breadth by covering the tailored design and fabrication for non-silicon spintronics and flexible electronics. Silicon technology is not limited to all those mentioned. It has lately also been extensively explored for the design and fabrication of exotic electric biosensors at nanoscale aiming to revolutionize biotechnology and life science, exemplified by nanopore and nanowire technologies for sequencing and biochemical analysis. Therefore, the learning outcomes are students with a comprehensive (in contrast to isolated) and integrated (instead of fragmented) set of knowledge spanning physics, simulation and engineering of all process modules essential to meet challenges and to contribute to breakthroughs identified in the European and US Chips Act.


Basic concept of planar technology for MOSFETs and integrated circuits; Photo- and electron-beam lithography; Thermal oxidation; Deposition techniques; Dry and wet etching techniques; Ion implantation; Diffusion; Contact formation; Metallization; Process integration; Process simulation; Micro/nano-structural characterization; Cleanroom construction and function; Tailored processing of non-silicon materials and devices.
The lectures cover process technology in advanced MOSFET, SPINTRONICS and FLEXIBLE ELECTRONICS.


11 lectures each for 2 hours,
2 simulation sessions each for 2 hours.


Comprising four complementary assessment parts:

  • Participation in at least 9 lectures,
  • Simulation lab report,
  • Written exam.


Ngan Pham,


Electrical Engineering


Ngan Pham,


Submit the application for admission to: Doctoral Education Board
Submit the application not later than: 01.08.2024

Last modified: 2023-11-10